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HY1408 HY1408P HY1408P TO-220 TO-220 80V50A MOS tube new Huaxi micro-electric
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HY3208AB TO-263 TO-263 80V120A brand new controller MOS tube Huayi Microelectricity
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HY1603B HY1603B TO-263 30V62A 30V62A replace FDB7030BL MOS tube field effect tube Huayi Microelectricity
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HY1906D HY1906D TO-252 60V70A 60V70A available in place IRFR1010Z IRFR1010Z IRLR3705Z IRFR3505 IRFR3505
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HY5012W TO-247 TO-247 125V300A 125V300A 3 6 m Ω Huaxi Microelectronics MOS tube Huaxi Microelectricity
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HY5204W HY5204W TO-247 40V320A1 6 m 40V320A1 Ω can be replaced IRFP7430 IRFP7430 IRLP3034 IRFP4004
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HY1608P HY1608P TO-220 80V65A 80V65A replace the FDP16AN08AO MOS pipe field effect pipe completely new
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HY1908D HY1908D TO-252 TO-252 80V90A can replace IRFR2307Z IRFR3607 field effect tube
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HY1310D TO-252 TO-252 100V33A can replace IRFR3410 IRFR540Z brand new spot
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HY1708P HY1708P TO-220 TO-220 80V75A is available in place of HUF75542P3 FDP75N08A
Price: $2.301 Transactions
HY1710B HY1710B TO-263 100V70A 100V70A replace the HUF76639S3S HUF75639S3S field effect tube
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HY1710P HY1710P TO-220 100V70A 100V70A available in place FQP70N10 FQP70N10 FDP3651U FDP150N10 FDP150N10
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HY3215B HY3215B TO-263 150V120A 150V120A available in place of FDB2532 FDB082N15A N channel MOS
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HY3215P HY3215P TO-220 150V120A 150V120A replace FDP075N15A field effect tube completely new spot
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HY3506B TO-263 TO-263 60V190A new spot available in place of FDB050AN06AO
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HY14P10P package TO-220 P channel -100V-40A 5 m Ω can replace IRF5210 Huaxi micro
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HY1920P TO-220 TO-220 90A200V 200V90A 200V90A N channel Field Effect Tube Huayi Microelectricity
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HY3403D Packaging TO-252 30V 100A 60W N channel Huaxi Microelectric Field Effect Tube
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HY3403P HY3403P TO-220 TO-220 30V140A MOS tube N channel Huaxi Microelectricity
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HY06P10S Packaging TO-SOP8L P gou -100V -6A Field Effect Tube Huayi Microelectricity
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HY4306B6 TO-263-6 TO-263-6 60V250A 263W MOS Tube Field Effect Tube Huayi Microelectricity
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HY4008B6 Packaging TO-263-6 80V 255A N channel Huaxi Microelectric Field Effect Tube
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HY4504B6 TO-263-6 40V 322A Huayi Microelectronics N channel Low pressure MOS tube
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HYG120P06LR1D TO-252 Pditch TO-252 -60V -55A Huaxi Microelectric Field Effect Tube
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HYG068N08NR1P Ngou TO-220 80V 160A 268W 268W Effect Tube Huayi Microelectricity
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HYG800P10LR1D TO-252 -100V -20A field effect tube P channel MOS tube Huaxi microelectricity
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HYG210P06LQ1D Packaging TO-252 -60V -40A Field Effect Tube P channel Huayi Microelectricity
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HYG072N08NR1P TO-220 80V 100A Field Effect Tube N channel MOS tube Huaxi Microelectricity
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HY1503C1 HY1503C1 TO-DFN8L (0303) 30V 30V 34A Field Effect Tube N channel MOS tube Huaxi Microelectricity
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HYG023N03LR1D 30V 110A can be substituted NCE30H12K NCE30H12K RU30120L AOD210 AOD210 Huaxi micro
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HYG045P03LQ1D -30v 90a can RU30L70L RU30L70L AOD403 AOD423 AOD423 Huaxi microelectricity
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HYQ12P10D -100V -16A can replace NCE01P13K RU1HL13L Huaxi micro-electric brand new
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HYG014N03LS1C2 30V 200A can be substituted NCEP30T19G NCEP30T19G NCEP30T17G AON6406 AON6406
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HYG065P03LQ1P TO-220 -30V -70A field effect tube P channel MOS tube Huaxi microelectricity
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HYG037N03LQ1D 30V 85A can replace AOD538 AOD4132 N channel Huaxi microelectricity
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HYG067N07NQ1D Packaging TO-252 68V 70A Field Effect Tube MOS Tube Huaxi Microelectricity
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HYG082N03LR1C1 HYG082N03LR1C1 DFN8L (0303) 30V 30V 32A generation ru3030m2 aon3414 Huayi
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HYG400P10LR1P HYG400P10LR1P Packaging TO-220 -100V -40A P channel MOS tube Huaxi Microelectricity
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HYG110P04LQ1C2 HYG110P04LQ1C2 HYG110P04LQ2C2 -40V -50A field effect pipe P channel
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