HVGTHVR5510S12 high-pressure commutating silicon stack 12KV 1A of power frequency 2CL12KV 1A in place of

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  • Item#:633546412431
  • Location:China
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  • Quantity: (29934 available)
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The use of the diode is a:
The limit is used for the use of the diode
The characteristics of the diode body:
High reverse pressure-pressure point contact type II body
Secondary tube construction in the form of:
Point-of-contact-type dipolar body
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